Toshiba Semiconductor and Storage TK60E08K3,S1X(S

TK60E08K3-S1X-S Toshiba Semiconductor and Storage TK60E08K3,S1X(S
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
RoHS Compliant
Operating Temperature:
-
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
9mOhm @ 30A, 10V
title:
TK60E08K3,S1X(S
Vgs(th) (Max) @ Id:
-
FET Type:
N-Channel
Drain to Source Voltage (Vdss):
75 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Mounting Type:
Through Hole
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
75 nC @ 10 V
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
60A
Power Dissipation (Max):
128W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK60E08
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK60E08K3,S1X(S. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs compliant. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 9mohm @ 30a, 10v. It carries FET type n-channel. The product has a 75 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product is available in through hole configuration. The maximum gate charge and given voltages include 75 nc @ 10 v. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 60a. The product carries maximum power dissipation 128w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk60e08, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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