Toshiba Semiconductor and Storage TK50E06K3A,S1X(S

TK50E06K3A-S1X-S Toshiba Semiconductor and Storage TK50E06K3A,S1X(S
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
RoHS Compliant
Operating Temperature:
-
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
8.5mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs:
54 nC @ 10 V
Vgs(th) (Max) @ Id:
-
FET Type:
N-Channel
Drain to Source Voltage (Vdss):
60 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
-
Mounting Type:
Through Hole
Series:
U-MOSIV
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK50E06
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK50E06K3A,S1X(S. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs compliant. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 8.5mohm @ 25a, 10v. The maximum gate charge and given voltages include 54 nc @ 10 v. It carries FET type n-channel. The product has a 60 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product is available in through hole configuration. The product u-mosiv, is a highly preferred choice for users. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 50a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk50e06, a base product number of the product. The product is designated with the ear99 code number.

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Mosfets Prod Guide(Datasheets)

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