Toshiba Semiconductor and Storage TK40E10K3,S1X(S

TK40E10K3-S1X-S Toshiba Semiconductor and Storage TK40E10K3,S1X(S
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
RoHS Compliant
Operating Temperature:
-
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
15mOhm @ 20A, 10V
title:
TK40E10K3,S1X(S
Vgs(th) (Max) @ Id:
4V @ 1mA
FET Type:
N-Channel
Drain to Source Voltage (Vdss):
100 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
4000 pF @ 10 V
Mounting Type:
Through Hole
Series:
U-MOSIV
Gate Charge (Qg) (Max) @ Vgs:
84 nC @ 10 V
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
40A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK40E10
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK40E10K3,S1X(S. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs compliant. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 15mohm @ 20a, 10v. The typical Vgs (th) (max) of the product is 4v @ 1ma. It carries FET type n-channel. The product has a 100 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 4000 pf @ 10 v. The product is available in through hole configuration. The product u-mosiv, is a highly preferred choice for users. The maximum gate charge and given voltages include 84 nc @ 10 v. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 40a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk40e10, a base product number of the product. The product is designated with the ear99 code number.

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Mosfets Prod Guide(Datasheets)

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