Toshiba Semiconductor and Storage TK25E06K3,S1X(S

TK25E06K3-S1X-S Toshiba Semiconductor and Storage TK25E06K3,S1X(S
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
29 nC @ 10 V
RoHS Status:
RoHS Compliant
Rds On (Max) @ Id, Vgs:
18mOhm @ 12.5A, 10V
FET Type:
N-Channel
Package:
Tube
Drain to Source Voltage (Vdss):
60 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
60W (Tc)
Mounting Type:
Through Hole
Series:
U-MOSIV
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
25A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK25E06
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK25E06K3,S1X(S. It is assigned with possible HTSUS value of 8541.29.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. The maximum gate charge and given voltages include 29 nc @ 10 v. The product is rohs compliant. It has a maximum Rds On and voltage of 18mohm @ 12.5a, 10v. It carries FET type n-channel. It is shipped in tube package . The product has a 60 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 60w (tc). The product is available in through hole configuration. The product u-mosiv, is a highly preferred choice for users. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 25a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk25e06, a base product number of the product. The product is designated with the ear99 code number.

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Mosfets Prod Guide(Datasheets)

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