Toshiba Semiconductor and Storage TK18E10K3,S1X(S

TK18E10K3-S1X-S Toshiba Semiconductor and Storage TK18E10K3,S1X(S
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
42mOhm @ 9A, 10V
edacadModel:
TK18E10K3,S1X(S Models
Gate Charge (Qg) (Max) @ Vgs:
33 nC @ 10 V
RoHS Status:
RoHS Compliant
FET Type:
N-Channel
edacadModelUrl:
/en/models/2768844
Package:
Tube
Drain to Source Voltage (Vdss):
100 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
-
Mounting Type:
Through Hole
Series:
U-MOSIV
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
18A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK18E10
ECCN:
EAR99
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK18E10K3,S1X(S. It is assigned with possible HTSUS value of 8541.29.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 42mohm @ 9a, 10v. The maximum gate charge and given voltages include 33 nc @ 10 v. The product is rohs compliant. It carries FET type n-channel. It is shipped in tube package . The product has a 100 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product is available in through hole configuration. The product u-mosiv, is a highly preferred choice for users. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 18a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk18e10, a base product number of the product. The product is designated with the ear99 code number.

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DK OBS NOTICE(PCN Obsolescence/ EOL)
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Mosfets Prod Guide(Datasheets)

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