Category:
Power MOSFET
Dimensions:
10.29 x 9.65 x 4.83mm
Maximum Continuous Drain Current:
220 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
3V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
220 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
13216 pF @ 25 V
Length:
10.29mm
Pin Count:
3
Typical Turn-Off Delay Time:
98 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
283 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.83mm
Typical Turn-On Delay Time:
25 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.6 mΩ
Base Part Number:
NVB586
Detailed Description:
N-Channel 60V 220A (Ta) 283W (Tc) Surface Mount D²PAK
Input Capacitance (Ciss) (Max) @ Vds:
13216pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
220nC @ 10V
Rds On (Max) @ Id, Vgs:
3mOhm @ 20A, 10V
Supplier Device Package:
D²PAK
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max):
283W (Tc)
Current - Continuous Drain (Id) @ 25°C:
220A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
