ON Semiconductor BFL4001-1E

BFL4001-1E ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
BFL40
Detailed Description:
N-Channel 900V 4.1A (Tc) 2W (Ta), 37W (Tc) Through Hole TO-220-3 Fullpack/TO-220F-3SG
Input Capacitance (Ciss) (Max) @ Vds:
850pF @ 30V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Through Hole
Rds On (Max) @ Id, Vgs:
2.7Ohm @ 3.25A, 10V
Drain to Source Voltage (Vdss):
900V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
44nC @ 10V
Supplier Device Package:
TO-220-3 Fullpack/TO-220F-3SG
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Power Dissipation (Max):
2W (Ta), 37W (Tc)
Current - Continuous Drain (Id) @ 25°C:
4.1A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is BFL4001-1E. Base Part Number: bfl40. It features n-channel 900v 4.1a (tc) 2w (ta), 37w (tc) through hole to-220-3 fullpack/to-220f-3sg. The product's input capacitance at maximum includes 850pf @ 30v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in through hole configuration. It has a maximum Rds On and voltage of 2.7ohm @ 3.25a, 10v. The product has a 900v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 44nc @ 10v. to-220-3 fullpack/to-220f-3sg is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3 full pack. The product carries maximum power dissipation 2w (ta), 37w (tc). The continuous current drain at 25°C is 4.1a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Mult Devices 28/Apr/2017(PCN Obsolescence/ EOL)

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