Cree/Wolfspeed C3M0065090J-TR

C3M0065090J-TR Cree/Wolfspeed
C3M0065090J-TR
Cree/Wolfspeed

Product Information

Manufacturer Standard Lead Time:
26 Weeks
Detailed Description:
N-Channel 900V 35A (Tc) 113W (Tc) Surface Mount D2PAK-7
Vgs(th) (Max) @ Id:
2.1V @ 5mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 15V
Rds On (Max) @ Id, Vgs:
78mOhm @ 20A, 15V
FET Type:
N-Channel
Manufacturer:
Cree/Wolfspeed
Drain to Source Voltage (Vdss):
900V
Vgs (Max):
+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds:
660pF @ 600V
Mounting Type:
Surface Mount
Series:
C3M™
Supplier Device Package:
D2PAK-7
Drive Voltage (Max Rds On, Min Rds On):
15V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
35A (Tc)
Customer Reference:
Power Dissipation (Max):
113W (Tc)
Technology:
SiCFET (Silicon Carbide)
Checking for live stock

This is manufactured by Cree/Wolfspeed. The manufacturer part number is C3M0065090J-TR. It has typical 26 weeks of manufacturer standard lead time. It features n-channel 900v 35a (tc) 113w (tc) surface mount d2pak-7. The typical Vgs (th) (max) of the product is 2.1v @ 5ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-8, d²pak (7 leads + tab), to-263ca. The maximum gate charge and given voltages include 30nc @ 15v. It has a maximum Rds On and voltage of 78mohm @ 20a, 15v. It carries FET type n-channel. The cree/wolfspeed's product offers user-desired applications. The product has a 900v drain to source voltage. The maximum Vgs rate is +19v, -8v. The product's input capacitance at maximum includes 660pf @ 600v. The product is available in surface mount configuration. The product c3m™, is a highly preferred choice for users. d2pak-7 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 35a (tc). The product carries maximum power dissipation 113w (tc). This product use sicfet (silicon carbide) technology.

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C3M0065090J(Datasheets)

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