Fairchild/ON Semiconductor FCA20N60_F109

FCA20N60_F109 Fairchild/ON Semiconductor
Fairchild/ON Semiconductor

Product Information

Rds On (Max) @ Id, Vgs:
190 mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds:
3080pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
98nC @ 10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
5V @ 250µA
Series:
SuperFET™
Standard Package:
30
Supplier Device Package:
TO-3PN
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
TO-3P-3, SC-65-3
Power Dissipation (Max):
208W (Tc)
Drain to Source Voltage (Vdss):
600V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Fairchild/ON Semiconductor
RoHs Compliant
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This is manufactured by Fairchild/ON Semiconductor. The manufacturer part number is FCA20N60_F109. It has a maximum Rds On and voltage of 190 mohm @ 10a, 10v. The product's input capacitance at maximum includes 3080pf @ 25v. The maximum gate charge and given voltages include 98nc @ 10v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product superfet™, is a highly preferred choice for users. It is available in the standard package of 30. to-3pn is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in to-3p-3, sc-65-3. The product carries maximum power dissipation 208w (tc). The product has a 600v drain to source voltage. The continuous current drain at 25°C is 20a (tc). This product use mosfet (metal oxide) technology. The fairchild/on semiconductor's product offers user-desired applications.

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Wafer Fabrication 04/Feb/2013(PCN Assembly/Origin)
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FCH20N60, FCA20N60(_F109)(Datasheets)
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Heat Sink Drawing Update 11/Feb/2014(PCN Design/Specification)

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