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This is manufactured by IXYS. The manufacturer part number is IXTP1R6N100D2. The FET features of the product include depletion mode. It is assigned with possible HTSUS value of 8541.29.0095. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 10ohm @ 800ma, 0v. The maximum gate charge and given voltages include 27 nc @ 5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 1000 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 100w (tc). The product's input capacitance at maximum includes 645 pf @ 25 v. It has a long 52 weeks standard lead time. The product is available in through hole configuration. The product depletion, is a highly preferred choice for users. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 1.6a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixtp1, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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