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IXYS IXFH14N60P3

IXFH14N60P3 IXYS
IXFH14N60P3
IXFH14N60P3
ET12594860
ET12594860
Single FETs, MOSFETs
Single FETs, MOSFETs
IXYS

Product Information

Category:
Power MOSFET
Dimensions:
16.26 x 5.3 x 21.46mm
Maximum Continuous Drain Current:
14 A
Transistor Material:
Si
Width:
5.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
540 mΩ
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
25 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1480 pF @ 25 V
Length:
16.26mm
Pin Count:
3
Typical Turn-Off Delay Time:
43 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
327 W
Series:
HiperFET, Polar3
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
21.46mm
Typical Turn-On Delay Time:
21 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
540mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
Vgs(th) (Max) @ Id:
5V @ 1mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
327W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1480 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Polar3™
Supplier Device Package:
TO-247AD (IXFH)
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFH14
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by IXYS. The manufacturer part number is IXFH14N60P3. It is of power mosfet category . The given dimensions of the product include 16.26 x 5.3 x 21.46mm. While 14 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.3mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 5v of maximum gate threshold voltage. It provides up to 540 mω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 25 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1480 pf @ 25 v . Its accurate length is 16.26mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 43 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 327 w maximum power dissipation. The product hiperfet, polar3, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 21.46mm. In addition, it has a typical 21 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 540mohm @ 7a, 10v. The maximum gate charge and given voltages include 25 nc @ 10 v. The typical Vgs (th) (max) of the product is 5v @ 1ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 327w (tc). The product's input capacitance at maximum includes 1480 pf @ 25 v. The product hiperfet™, polar3™, is a highly preferred choice for users. to-247ad (ixfh) is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 14a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixfh14, a base product number of the product. The product is designated with the ear99 code number.

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IXFA14N60P3, IXFP14N60P3, IXFH14N60P3, Polar3 HiPerFET, Power MOSFETs, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult DEV EOL/OBS 08/Nov/2023(PCN Obsolescence/ EOL)
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IXFx14N60P3(Datasheets)

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FAQs

Yes. You can also search IXFH14N60P3 on website for other similar products.
We accept all major payment methods for all products including ET12594860. Please check your shopping cart at the time of order.
You can order IXYS brand products with IXFH14N60P3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of IXYS IXFH14N60P3. You can also check on our website or by contacting our customer support team for further order details on IXYS IXFH14N60P3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET12594860 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "IXYS" products on our website by using Enrgtech's Unique Manufacturing Part Number ET12594860.
Yes. We ship IXFH14N60P3 Internationally to many countries around the world.