Renesas Electronics America RJK2055DPA-00#J0

RJK2055DPA-00-J0 Renesas Electronics America RJK2055DPA-00#J0
Renesas Electronics America

Product Information

Rds On (Max) @ Id, Vgs:
69mOhm @ 10A, 10V
Detailed Description:
N-Channel 200V 20A (Ta) 30W (Tc) Surface Mount 8-WPAK
Input Capacitance (Ciss) (Max) @ Vds:
2400pF @ 25V
Mounting Type:
Surface Mount
Gate Charge (Qg) (Max) @ Vgs:
38nC @ 10V
Drain to Source Voltage (Vdss):
200V
Vgs (Max):
±30V
Supplier Device Package:
8-WPAK
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-PowerWDFN
Power Dissipation (Max):
30W (Tc)
Current - Continuous Drain (Id) @ 25°C:
20A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is RJK2055DPA-00#J0. It has a maximum Rds On and voltage of 69mohm @ 10a, 10v. It features n-channel 200v 20a (ta) 30w (tc) surface mount 8-wpak. The product's input capacitance at maximum includes 2400pf @ 25v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 38nc @ 10v. The product has a 200v drain to source voltage. The maximum Vgs rate is ±30v. 8-wpak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-powerwdfn. The product carries maximum power dissipation 30w (tc). The continuous current drain at 25°C is 20a (ta). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.

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RJK2055DPA(Datasheets)

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