NXP USA Inc. BUK7575-55A,127

BUK7575-55A-127 NXP USA Inc. BUK7575-55A,127
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
RoHS Status:
ROHS3 Compliant
Rds On (Max) @ Id, Vgs:
75mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
55 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
483 pF @ 25 V
Mounting Type:
Through Hole
Series:
TrenchMOS™
Supplier Device Package:
TO-220AB
Current - Continuous Drain (Id) @ 25°C:
20.3A (Tc)
Power Dissipation (Max):
62W (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is BUK7575-55A,127. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. The product is rohs3 compliant. It has a maximum Rds On and voltage of 75mohm @ 10a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 55 v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 483 pf @ 25 v. The product is available in through hole configuration. The product trenchmos™, is a highly preferred choice for users. to-220ab is the supplier device package value. The continuous current drain at 25°C is 20.3a (tc). The product carries maximum power dissipation 62w (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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