Diodes Incorporated DMN1016UCB6-7

DMN1016UCB6-7 Diodes Incorporated
Diodes Incorporated

Product Information

Manufacturer Standard Lead Time:
15 Weeks
Detailed Description:
N-Channel 12V 5.5A (Ta) 920mW (Ta) Surface Mount U-WLB1510-6 (Type B)
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UFBGA, WLBGA
Base Part Number:
DMN1016
Gate Charge (Qg) (Max) @ Vgs:
4.2nC @ 4.5V
Rds On (Max) @ Id, Vgs:
20mOhm @ 1.5A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Manufacturer:
Diodes Incorporated
Drain to Source Voltage (Vdss):
12V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
423pF @ 6V
Mounting Type:
Surface Mount
Supplier Device Package:
U-WLB1510-6 (Type B)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
5.5A (Ta)
Customer Reference:
Power Dissipation (Max):
920mW (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Diodes Incorporated. The manufacturer part number is DMN1016UCB6-7. It has typical 15 weeks of manufacturer standard lead time. It features n-channel 12v 5.5a (ta) 920mw (ta) surface mount u-wlb1510-6 (type b). The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-ufbga, wlbga. Base Part Number: dmn1016. The maximum gate charge and given voltages include 4.2nc @ 4.5v. It has a maximum Rds On and voltage of 20mohm @ 1.5a, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. The diodes incorporated's product offers user-desired applications. The product has a 12v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 423pf @ 6v. The product is available in surface mount configuration. u-wlb1510-6 (type b) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 5.5a (ta). The product carries maximum power dissipation 920mw (ta). This product use mosfet (metal oxide) technology.

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Mult Dev Wafer Chgs 3/Feb/2021(PCN Assembly/Origin)
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DMN1016UCB6(Datasheets)
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Diodes RoHS 3 Cert(Environmental Information)

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FAQs

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