Category:
Power MOSFET
Dimensions:
2.9 x 2.3 x 0.9mm
Maximum Continuous Drain Current:
14 A
Transistor Material:
Si
Width:
2.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.3V
Maximum Drain Source Resistance:
22.5 mΩ
Package Type:
ECH
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
29 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2430 pF @ 10 V
Length:
2.9mm
Pin Count:
8
Typical Turn-Off Delay Time:
210 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.6 W
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.9mm
Typical Turn-On Delay Time:
21 ns
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
ECH8420
Detailed Description:
N-Channel 20V 14A (Ta) 1.6W (Ta) Surface Mount 8-ECH
Input Capacitance (Ciss) (Max) @ Vds:
2430pF @ 10V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
6.8mOhm @ 7A, 4.5V
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±12V
Gate Charge (Qg) (Max) @ Vgs:
29nC @ 4.5V
Supplier Device Package:
8-ECH
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Packaging:
Cut Tape (CT)
Operating Temperature:
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-SMD, Flat Lead
Power Dissipation (Max):
1.6W (Ta)
Current - Continuous Drain (Id) @ 25°C:
14A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
