Category:
Power MOSFET
Dimensions:
1.04 x 0.64 x 0.2mm
Maximum Continuous Drain Current:
2.5 A
Transistor Material:
Si
Width:
0.64mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Package Type:
PICOSTAR
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1090 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
175 pF @ -10 V
Length:
1.04mm
Pin Count:
3
Forward Transconductance:
3.5S
Typical Turn-Off Delay Time:
18 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.5 W
Series:
FemtoFET
Maximum Gate Source Voltage:
-12 V
Height:
0.2mm
Typical Turn-On Delay Time:
9.5 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
0.75V
Maximum Drain Source Resistance:
825 mΩ
FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-XFDFN
Rds On (Max) @ Id, Vgs:
94mOhm @ 500mA, 8V
title:
CSD25484F4T
Vgs(th) (Max) @ Id:
1.2V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
CSD25484F4T Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 8V
edacadModelUrl:
/en/models/5267354
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
-12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
500mW (Ta)
standardLeadTime:
12 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
230 pF @ 10 V
Mounting Type:
Surface Mount
Series:
FemtoFET™
Gate Charge (Qg) (Max) @ Vgs:
1.42 nC @ 4.5 V
Supplier Device Package:
3-PICOSTAR
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
2.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD25484
ECCN:
EAR99
