Nexperia USA Inc. PSMN4R0-60YS,115

PSMN4R0-60YS-115 Nexperia USA Inc. PSMN4R0-60YS,115
Nexperia USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SC-100, SOT-669
Rds On (Max) @ Id, Vgs:
4mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs:
56 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
PSMN4R0-60YS,115 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5725917
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
130W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3501 pF @ 30 V
standardLeadTime:
16 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
LFPAK56, Power-SO8
Current - Continuous Drain (Id) @ 25°C:
74A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PSMN4R0
ECCN:
EAR99
Checking for live stock

This is manufactured by Nexperia USA Inc.. The manufacturer part number is PSMN4R0-60YS,115. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in sc-100, sot-669. It has a maximum Rds On and voltage of 4mohm @ 15a, 10v. The maximum gate charge and given voltages include 56 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 130w (tc). The product's input capacitance at maximum includes 3501 pf @ 30 v. It has a long 16 weeks standard lead time. The product is available in surface mount configuration. lfpak56, power-so8 is the supplier device package value. The continuous current drain at 25°C is 74a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to psmn4r0, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev Wafer Test Chgs 4/Feb/2022(PCN Assembly/Origin)
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PSMN4R0 13/Jul/2016(PCN Design/Specification)
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PSMN4R0-60YS(Datasheets)
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Mult Devices Label 30/Sep/2018(PCN Packaging)
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All Dev Label Chgs 2/Aug/2020(PCN Packaging)

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FAQs

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