Microsemi Corporation APT58M80J

APT58M80J Microsemi Corporation
APT58M80J
Microsemi Corporation

Product Information

Manufacturer Standard Lead Time:
29 Weeks
Rds On (Max) @ Id, Vgs:
110mOhm @ 43A, 10V
Detailed Description:
N-Channel 800V 60A 960W (Tc) Chassis Mount SOT-227
Input Capacitance (Ciss) (Max) @ Vds:
17550pF @ 25V
Mounting Type:
Chassis Mount
Vgs(th) (Max) @ Id:
5V @ 5mA
Drain to Source Voltage (Vdss):
800V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
570nC @ 10V
Supplier Device Package:
SOT-227
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
SOT-227-4, miniBLOC
Power Dissipation (Max):
960W (Tc)
Current - Continuous Drain (Id) @ 25°C:
60A
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT58M80J. It has typical 29 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 110mohm @ 43a, 10v. It features n-channel 800v 60a 960w (tc) chassis mount sot-227. The product's input capacitance at maximum includes 17550pf @ 25v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 5v @ 5ma. The product has a 800v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 570nc @ 10v. sot-227 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in sot-227-4, minibloc. The product carries maximum power dissipation 960w (tc). The continuous current drain at 25°C is 60a. This product use mosfet (metal oxide) technology. The microsemi corporation's product offers user-desired applications.

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