Rohm Semiconductor RRF015P03TL

RRF015P03TL Rohm Semiconductor
Rohm Semiconductor

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
P-Channel 30V 1.5A (Ta) 320mW (Ta) Surface Mount TUMT3
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
3-SMD, Flat Lead
Base Part Number:
RRF015
Gate Charge (Qg) (Max) @ Vgs:
6.4nC @ 10V
Rds On (Max) @ Id, Vgs:
160mOhm @ 1.5A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Manufacturer:
Rohm Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
230pF @ 10V
Mounting Type:
Surface Mount
Supplier Device Package:
TUMT3
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
1.5A (Ta)
Customer Reference:
Power Dissipation (Max):
320mW (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Rohm Semiconductor. The manufacturer part number is RRF015P03TL. It has typical 16 weeks of manufacturer standard lead time. It features p-channel 30v 1.5a (ta) 320mw (ta) surface mount tumt3. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 3-smd, flat lead. Base Part Number: rrf015. The maximum gate charge and given voltages include 6.4nc @ 10v. It has a maximum Rds On and voltage of 160mohm @ 1.5a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The rohm semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 230pf @ 10v. The product is available in surface mount configuration. tumt3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 1.5a (ta). The product carries maximum power dissipation 320mw (ta). This product use mosfet (metal oxide) technology.

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Transistor, MOSFET Level 1 MSL(Environmental Information)
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Transistor Whisker Info(Environmental Information)
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RRF015P03 ESD Data(Environmental Information)
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TUMT3 Constitution Material List(Environmental Information)
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P/N Explanation for Transistors(Datasheets)
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TUMT3 TL Taping Spec(Datasheets)
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Product Catalog Transistors(Datasheets)
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RRF015P03(Datasheets)
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Transistor, MOSFET Flammability(Other Related Documents)
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TUMT3 Inner Structure(Other Related Documents)
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TUMT3 MOS Reliability Test(Other Related Documents)
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TUMT3 Part Marking(Other Related Documents)

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