ON Semiconductor NVTFS4C05NTAG

NVTFS4C05NTAG ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
17 Weeks
Detailed Description:
N-Channel 30V 22A (Ta), 102A (Tc) 3.2W (Ta), 68W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerWDFN
Base Part Number:
NVTFS4
Gate Charge (Qg) (Max) @ Vgs:
31nC @ 10V
Rds On (Max) @ Id, Vgs:
3.6mOhm @ 30A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1988pF @ 15V
Mounting Type:
Surface Mount
Supplier Device Package:
8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
22A (Ta), 102A (Tc)
Customer Reference:
Power Dissipation (Max):
3.2W (Ta), 68W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NVTFS4C05NTAG. It has typical 17 weeks of manufacturer standard lead time. It features n-channel 30v 22a (ta), 102a (tc) 3.2w (ta), 68w (tc) surface mount 8-wdfn (3.3x3.3). The typical Vgs (th) (max) of the product is 2.2v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powerwdfn. Base Part Number: nvtfs4. The maximum gate charge and given voltages include 31nc @ 10v. It has a maximum Rds On and voltage of 3.6mohm @ 30a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1988pf @ 15v. The product is available in surface mount configuration. 8-wdfn (3.3x3.3) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 22a (ta), 102a (tc). The product carries maximum power dissipation 3.2w (ta), 68w (tc). This product use mosfet (metal oxide) technology.

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Wafer Fab Transfer 21/Aug/2020(PCN Assembly/Origin)
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NVTFS4C05N(Datasheets)

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