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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3J306T(TE85L,F). It is assigned with possible HTSUS value of 8541.21.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 117mohm @ 1a, 10v. The maximum gate charge and given voltages include 2.5 nc @ 15 v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 700mw (ta). The product's input capacitance at maximum includes 280 pf @ 15 v. The product is available in surface mount configuration. tsm is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 2.4a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm3j306, a base product number of the product. The product is designated with the ear99 code number.
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