Category:
Power MOSFET
Dimensions:
6.1 x 5.1 x 1.05mm
Maximum Continuous Drain Current:
235 A
Width:
5.1mm
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
DFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
65 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
4300 pF @ 25 V
Length:
6.1mm
Pin Count:
4+Tab
Forward Transconductance:
145S
Typical Turn-Off Delay Time:
36 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
128 W
Series:
NTMFS5C426N
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.05mm
Typical Turn-On Delay Time:
15 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
1.3 mΩ
Manufacturer Standard Lead Time:
30 Weeks
Detailed Description:
N-Channel 40V 41A (Ta), 235A (Tc) 3.8W (Ta), 128W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Base Part Number:
NTMFS5
Gate Charge (Qg) (Max) @ Vgs:
65nC @ 10V
Rds On (Max) @ Id, Vgs:
1.3mOhm @ 50A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4300pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
41A (Ta), 235A (Tc)
Customer Reference:
Power Dissipation (Max):
3.8W (Ta), 128W (Tc)
Technology:
MOSFET (Metal Oxide)
