Category:
Power MOSFET
Dimensions:
5 x 6 x 0.81mm
Maximum Continuous Drain Current:
60 A
Transistor Material:
Si
Width:
6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
PowerFLAT
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
PRICED TO CLEAR:
Yes
Typical Gate Charge @ Vgs:
8 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1290 pF @ 25 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
32.4 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
60 W
Series:
STripFET V
Maximum Gate Source Voltage:
-22 V, +22 V
Height:
0.81mm
Typical Turn-On Delay Time:
8.6 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
7.1 mΩ
Detailed Description:
N-Channel 30V 60A (Tc) 60W (Tc) Surface Mount PowerFlat™ (5x6)
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Base Part Number:
STL60
Gate Charge (Qg) (Max) @ Vgs:
8nC @ 4.5V
Rds On (Max) @ Id, Vgs:
7.1mOhm @ 8.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±22V
Input Capacitance (Ciss) (Max) @ Vds:
1290pF @ 25V
Mounting Type:
Surface Mount
Series:
STripFET™ V
Supplier Device Package:
PowerFlat™ (5x6)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Customer Reference:
Power Dissipation (Max):
60W (Tc)
Technology:
MOSFET (Metal Oxide)
