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Toshiba Semiconductor and Storage TK5A60W,S4VX

TK5A60W-S4VX Toshiba Semiconductor and Storage TK5A60W,S4VX
TK5A60W,S4VX
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
900mOhm @ 2.7A, 10V
title:
TK5A60W,S4VX
Vgs(th) (Max) @ Id:
3.7V @ 270µA
edacadModel:
TK5A60W,S4VX Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/3847328
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
30W (Tc)
standardLeadTime:
20 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
380 pF @ 300 V
Mounting Type:
Through Hole
Series:
DTMOSIV
Gate Charge (Qg) (Max) @ Vgs:
10.5 nC @ 10 V
Supplier Device Package:
TO-220SIS
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
5.4A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK5A60
ECCN:
EAR99
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK5A60W,S4VX. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 900mohm @ 2.7a, 10v. The typical Vgs (th) (max) of the product is 3.7v @ 270µa. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 30w (tc). It has a long 20 weeks standard lead time. The product's input capacitance at maximum includes 380 pf @ 300 v. The product is available in through hole configuration. The product dtmosiv, is a highly preferred choice for users. The maximum gate charge and given voltages include 10.5 nc @ 10 v. to-220sis is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 5.4a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk5a60, a base product number of the product. The product is designated with the ear99 code number.

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TK5A60W(Datasheets)

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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TK5A60W,S4VX. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TK5A60W,S4VX.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET12227517 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET12227517.
Yes. We ship TK5A60W,S4VX Internationally to many countries around the world.
Related Manufacturers: Texas Instruments ROHM Semiconductor Microchip Technology IXYS Taiwan Semiconductor Corporation Toshiba Semiconductor and Storage onsemi Yangjie Technology International Rectifier Harris Corporation
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