STMicroelectronics STD7NS20T4

STD7NS20T4 STMicroelectronics
STD7NS20T4
STD7NS20T4
STMicroelectronics

Product Information

Maximum Continuous Drain Current:
7 A
Transistor Material:
Si
Width:
6.2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Maximum Gate Threshold Voltage:
4V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
31 nC @ 10 V
Channel Type:
N
Length:
6.6mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
45 W
Series:
STripFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.4mm
Maximum Drain Source Resistance:
400 mΩ
Manufacturer Standard Lead Time:
52 Weeks
Detailed Description:
N-Channel 200V 7A (Tc) 45W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
STD7NS20
Gate Charge (Qg) (Max) @ Vgs:
45nC @ 10V
Rds On (Max) @ Id, Vgs:
400mOhm @ 3.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
200V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
540pF @ 25V
Mounting Type:
Surface Mount
Series:
MESH OVERLAY™
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
7A (Tc)
Customer Reference:
Power Dissipation (Max):
45W (Tc)
Technology:
MOSFET (Metal Oxide)
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STD7NS20T4. While 7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.2mm wide. The product offers single transistor configuration. It has a maximum of 200 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 31 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.6mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 45 w maximum power dissipation. The product stripfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.4mm. It provides up to 400 mω maximum drain source resistance. It has typical 52 weeks of manufacturer standard lead time. It features n-channel 200v 7a (tc) 45w (tc) surface mount dpak. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: std7ns20. The maximum gate charge and given voltages include 45nc @ 10v. It has a maximum Rds On and voltage of 400mohm @ 3.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The stmicroelectronics's product offers user-desired applications. The product has a 200v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 540pf @ 25v. The product mesh overlay™, is a highly preferred choice for users. dpak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 7a (tc). The product carries maximum power dissipation 45w (tc). This product use mosfet (metal oxide) technology.

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N-channel 200V - 0.35 OHM - 7A - IPAK MESH OVERLAY MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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STD7NS20(-1)(Datasheets)

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