Toshiba Semiconductor and Storage TPN13008NH,L1Q

TPN13008NH-L1Q Toshiba Semiconductor and Storage TPN13008NH,L1Q
TPN13008NH,L1Q
Toshiba Semiconductor and Storage

Product Information

Manufacturer Standard Lead Time:
24 Weeks
Detailed Description:
N-Channel 80V 18A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Vgs(th) (Max) @ Id:
4V @ 200µA
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerVDFN
Base Part Number:
TPN13008
Gate Charge (Qg) (Max) @ Vgs:
18nC @ 10V
Rds On (Max) @ Id, Vgs:
13.3mOhm @ 9A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
80V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1600pF @ 40V
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Supplier Device Package:
8-TSON Advance (3.3x3.3)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Customer Reference:
Power Dissipation (Max):
700mW (Ta), 42W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPN13008NH,L1Q. It has typical 24 weeks of manufacturer standard lead time. It features n-channel 80v 18a (tc) 700mw (ta), 42w (tc) surface mount 8-tson advance (3.3x3.3). The typical Vgs (th) (max) of the product is 4v @ 200µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. Base Part Number: tpn13008. The maximum gate charge and given voltages include 18nc @ 10v. It has a maximum Rds On and voltage of 13.3mohm @ 9a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 80v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1600pf @ 40v. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. 8-tson advance (3.3x3.3) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 18a (tc). The product carries maximum power dissipation 700mw (ta), 42w (tc). This product use mosfet (metal oxide) technology.

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