Vishay Siliconix SISA10DN-T1-GE3

SISA10DN-T1-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8
Rds On (Max) @ Id, Vgs:
3.7mOhm @ 10A, 10V
title:
SISA10DN-T1-GE3
Vgs(th) (Max) @ Id:
2.2V @ 250µA
REACH Status:
REACH info available upon request
edacadModel:
SISA10DN-T1-GE3 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/3178402
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
+20V, -16V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.6W (Ta), 39W (Tc)
standardLeadTime:
10 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2425 pF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Gate Charge (Qg) (Max) @ Vgs:
51 nC @ 10 V
Supplier Device Package:
PowerPAK® 1212-8
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SISA10
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SISA10DN-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® 1212-8. It has a maximum Rds On and voltage of 3.7mohm @ 10a, 10v. The typical Vgs (th) (max) of the product is 2.2v @ 250µa. In addition, it is reach info available upon request. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 30 v drain to source voltage. The maximum Vgs rate is +20v, -16v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.6w (ta), 39w (tc). It has a long 10 weeks standard lead time. The product's input capacitance at maximum includes 2425 pf @ 15 v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. The maximum gate charge and given voltages include 51 nc @ 10 v. powerpak® 1212-8 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 30a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sisa10, a base product number of the product. The product is designated with the ear99 code number.

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New Solder Plating Site 18/Apr/2023(PCN Assembly/Origin)
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Mult Dev 08/Dec/2022(PCN Design/Specification)
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SISA10DN(Datasheets)

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FAQs

Yes. You can also search SISA10DN-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET12195982. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SISA10DN-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SISA10DN-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SISA10DN-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET12195982 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET12195982.
Yes. We ship SISA10DN-T1-GE3 Internationally to many countries around the world.