Texas Instruments CSD19532KTTT

CSD19532KTTT Texas Instruments
CSD19532KTTT
Texas Instruments

Product Information

The CSD19532KTTT, Texas Instruments, is a 100-volt power MOSFET that can handle high voltages in power management applications. Its durable and SMD design, high thermal and protection features, low price, and extended functionality make it a professional choice in various settings.

 

Maximum Drain Source Voltage:
100 V
Mounting Type:
Surface Mount
Maximum Continuous Drain Current:
200 A
Channel Type:
N
Package Type:
DDPAK/ TO-263
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Rds On (Max) @ Id, Vgs:
5.6mOhm @ 90A, 10V
Gate Charge (Qg) (Max) @ Vgs:
57 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Affected
edacadModel:
CSD19532KTTT Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/5764595
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
2 (1 Year)
Power Dissipation (Max):
250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
5060 pF @ 50 V
standardLeadTime:
12 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
TO-263 (DDPAK-3)
Current - Continuous Drain (Id) @ 25°C:
200A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD19532
ECCN:
EAR99
RoHs Compliant
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Texas Instruments (TI) is a leading manufacturer of semiconductor devices, and one of its notable offerings is the CSD19532KTTT, a 100-V, N-channel NexFET power MOSFET. This high-voltage device is designed to provide efficient and reliable power management solutions for a wide range of applications.

  • High-Voltage Capability: The CSD19532KTTT is designed to handle high voltage requirements with its 100-V rating. This makes it suitable for applications that demand robust power handling capabilities, such as industrial automation, motor control, power supplies, and automotive systems.
  • N-Channel NexFET Technology: The CSD19532KTTT utilizes TI's advanced N-channel NexFET technology. This technology combines the benefits of low on-resistance (RDS (on)) and excellent switching performance, resulting in reduced power losses and improved overall efficiency. The N-channel configuration ensures better control over the current flow and enhances power management capabilities.
  • Power Efficiency and Thermal Performance: Efficiency is a key consideration in power management, and the CSD19532KTTT delivers on this front. With its low RDS (on) characteristics, the MOSFET minimizes conduction losses, thereby increasing overall system efficiency. Additionally, it features enhanced thermal performance thanks to its excellent power dissipation capabilities, ensuring reliable operation even under high-power conditions.
  • Robust Design and Protection Features: The CSD19532KTTT incorporates various protection features to safeguard against potential issues. It includes built-in diodes to protect against reverse current flow and voltage spikes. The device also has overcurrent and over-temperature protection, offering robustness and durability in demanding environments.
  • Compact and Versatile: Despite its high-voltage capabilities, the CSD19532KTTT is designed to be compact and space-efficient. Its small footprint and low-profile package make it suitable for limited-space applications. Furthermore, its versatility allows it to be used in various circuit designs, providing flexibility for engineers.

 

 

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