Maximum Continuous Drain Current:
200 mA
Width:
4.06mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
3V
Package Type:
TO-92
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.8V
Maximum Operating Temperature:
+150 °C
Channel Type:
N
Length:
5.08mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
1 W
Series:
2N7000
Maximum Gate Source Voltage:
30 V
Height:
5.33mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
0.85V
Maximum Drain Source Resistance:
5.3 Ω
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Rds On (Max) @ Id, Vgs:
5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:
3V @ 1mA
REACH Status:
REACH Unaffected
edacadModel:
2N7000-G Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/4902350
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1W (Tc)
standardLeadTime:
11 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
60 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Packaging:
Bag
Current - Continuous Drain (Id) @ 25°C:
200mA (Tj)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
2N7000
ECCN:
EAR99
