Transphorm TPH3202PD

TPH3202PD Transphorm
Transphorm

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
350mOhm @ 5.5A, 8V
Gate Charge (Qg) (Max) @ Vgs:
9.3 nC @ 4.5 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±18V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
65W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
760 pF @ 480 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Technology:
GaNFET (Gallium Nitride)
ECCN:
EAR99
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This is manufactured by Transphorm. The manufacturer part number is TPH3202PD. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 350mohm @ 5.5a, 8v. The maximum gate charge and given voltages include 9.3 nc @ 4.5 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±18v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 65w (tc). The product's input capacitance at maximum includes 760 pf @ 480 v. The product is available in through hole configuration. to-220ab is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 9a (tc). This product use ganfet (gallium nitride) technology. The product is designated with the ear99 code number.

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Mult Devices EOL 02/Apr/2018(PCN Obsolescence/ EOL)

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