Maximum Continuous Drain Current:
2.7 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.25V
Maximum Drain Source Resistance:
48 mΩ
Package Type:
SOIC
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
20 nC @ 4.5 V
Channel Type:
P
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.5 W
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
Base Part Number:
NTMS5
Detailed Description:
P-Channel 20V 3.95A (Ta) 790mW (Ta) Surface Mount 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds:
1900pF @ 16V
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.25V @ 250µA
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±10V
Gate Charge (Qg) (Max) @ Vgs:
35nC @ 4.5V
Rds On (Max) @ Id, Vgs:
33mOhm @ 5.4A, 4.5V
Supplier Device Package:
8-SOIC
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Power Dissipation (Max):
790mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
3.95A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
