Rohm Semiconductor R6024KNZ1C9

R6024KNZ1C9 Rohm Semiconductor
Rohm Semiconductor

Product Information

Rds On (Max) @ Id, Vgs:
165mOhm @ 11.3A, 10V
Detailed Description:
N-Channel 600V 24A (Tc) 245W (Tc) Through Hole TO-247
Input Capacitance (Ciss) (Max) @ Vds:
2000pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
5V @ 1mA
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
45nC @ 10V
Supplier Device Package:
TO-247
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-247-3
Power Dissipation (Max):
245W (Tc)
Current - Continuous Drain (Id) @ 25°C:
24A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is R6024KNZ1C9. It has a maximum Rds On and voltage of 165mohm @ 11.3a, 10v. It features n-channel 600v 24a (tc) 245w (tc) through hole to-247. The product's input capacitance at maximum includes 2000pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 5v @ 1ma. The product has a 600v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 45nc @ 10v. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-247-3. The product carries maximum power dissipation 245w (tc). The continuous current drain at 25°C is 24a (tc). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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R6024KNZ1 ESD Data(Environmental Information)
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Transistor, MOSFET Level 1 MSL(Environmental Information)
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TO-247 Constitution Material List(Environmental Information)
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Transistor Whisker Info(Environmental Information)
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R60YYY 05/Mar/2020(PCN Obsolescence/ EOL)
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Transistor, MOSFET Flammability(Other Related Documents)
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TO-247 Part Marking(Other Related Documents)
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TO247 Inner Structure(Other Related Documents)

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