ON Semiconductor NVGS5120PT1G

NVGS5120PT1G ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
26 Weeks
Detailed Description:
P-Channel 60V 1.8A (Ta) 600mW (Ta) Surface Mount 6-TSOP
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6
Base Part Number:
NVGS51
Gate Charge (Qg) (Max) @ Vgs:
18.1nC @ 10V
Rds On (Max) @ Id, Vgs:
111mOhm @ 2.9A, 10V
FET Type:
P-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
942pF @ 30V
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSOP
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
1.8A (Ta)
Customer Reference:
Power Dissipation (Max):
600mW (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NVGS5120PT1G. It has typical 26 weeks of manufacturer standard lead time. It features p-channel 60v 1.8a (ta) 600mw (ta) surface mount 6-tsop. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6. Base Part Number: nvgs51. The maximum gate charge and given voltages include 18.1nc @ 10v. It has a maximum Rds On and voltage of 111mohm @ 2.9a, 10v. It carries FET type p-channel. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 942pf @ 30v. The product is available in surface mount configuration. 6-tsop is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 1.8a (ta). The product carries maximum power dissipation 600mw (ta). This product use mosfet (metal oxide) technology.

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NTGS5120P, NVGS5120P(Datasheets)
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Covering Tape/Material Chg 20/May/2016(PCN Packaging)

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