Toshiba Semiconductor and Storage TPH7R006PL,L1Q

Enrgtech Part No: ET12134411
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Manufacturer Part No:
TPH7R006PL,L1Q
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Manufacturer: Toshiba Semiconductor and Storage

TPH7R006PL-L1Q Toshiba Semiconductor and Storage TPH7R006PL,L1Q

Product Information

FET Feature:

HTSUS:

8541.29.0095

RoHS Status:

ROHS3 Compliant

Operating Temperature:

175°C (TJ)

Package / Case:

8-PowerVDFN

Rds On (Max) @ Id, Vgs:

13.5mOhm @ 10A, 4.5V

title:

TPH7R006PL,L1Q

Vgs(th) (Max) @ Id:

2.5V @ 200µA

edacadModel:

TPH7R006PL,L1Q Models

FET Type:

N-Channel

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

edacadModelUrl:

/en/models/6570923

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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPH7R006PL,L1Q. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 175°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 13.5mohm @ 10a, 4.5v. The typical Vgs (th) (max) of the product is 2.5v @ 200µa. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 81w (tc). It has a long 16 weeks standard lead time. The product's input capacitance at maximum includes 1875 pf @ 30 v. The product is available in surface mount configuration. The product u-mosix-h, is a highly preferred choice for users. The maximum gate charge and given voltages include 22 nc @ 10 v. 8-sop advance (5x5) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 60a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tph7r006, a base product number of the product. The product is designated with the ear99 code number.

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