Toshiba Semiconductor and Storage TPCA8052-H(TE12LQM

TPCA8052-H-TE12LQM Toshiba Semiconductor and Storage TPCA8052-H(TE12LQM
Toshiba Semiconductor and Storage

Product Information

Base Part Number:
TLP781
Detailed Description:
N-Channel 40V 20A (Ta) 1.6W (Ta), 30W (Tc) Surface Mount 8-SOP Advance (5x5)
Input Capacitance (Ciss) (Max) @ Vds:
2110pF @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.3V @ 200µA
Series:
*
Gate Charge (Qg) (Max) @ Vgs:
25nC @ 10V
Rds On (Max) @ Id, Vgs:
11.3mOhm @ 10A, 10V
Supplier Device Package:
8-SOP Advance (5x5)
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-PowerVDFN
Power Dissipation (Max):
1.6W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
20A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Toshiba Semiconductor and Storage
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPCA8052-H(TE12LQM. Base Part Number: tlp781. It features n-channel 40v 20a (ta) 1.6w (ta), 30w (tc) surface mount 8-sop advance (5x5). The product's input capacitance at maximum includes 2110pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.3v @ 200µa. The maximum gate charge and given voltages include 25nc @ 10v. It has a maximum Rds On and voltage of 11.3mohm @ 10a, 10v. 8-sop advance (5x5) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-powervdfn. The product carries maximum power dissipation 1.6w (ta), 30w (tc). The product has a 40v drain to source voltage. The continuous current drain at 25°C is 20a (ta). This product use mosfet (metal oxide) technology. The toshiba semiconductor and storage's product offers user-desired applications.

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Mosfets Prod Guide(Datasheets)

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