Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
10.8 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
23.2 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.2V
Height:
1.1mm
Width:
6.1mm
Length:
5.1mm
Maximum Drain Source Resistance:
8.5 mΩ
Package Type:
SO-8FL
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
48 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
35 Weeks
Detailed Description:
N-Channel 30V 9.7A (Ta), 48A (Tc) 920mW (Ta), 23.2W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Base Part Number:
NTMFS4925
Gate Charge (Qg) (Max) @ Vgs:
21.5nC @ 10V
Rds On (Max) @ Id, Vgs:
5.6mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1264pF @ 15V
Mounting Type:
Surface Mount
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
9.7A (Ta), 48A (Tc)
Customer Reference:
Power Dissipation (Max):
920mW (Ta), 23.2W (Tc)
Technology:
MOSFET (Metal Oxide)
