Toshiba Semiconductor and Storage SSM5N16FUTE85LF

SSM5N16FUTE85LF Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
5-TSSOP, SC-70-5, SOT-353
Rds On (Max) @ Id, Vgs:
3Ohm @ 10mA, 4V
RoHS Status:
RoHS Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
200mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
9.3 pF @ 3 V
Mounting Type:
Surface Mount
Series:
π-MOSVI
Supplier Device Package:
5-SSOP
Current - Continuous Drain (Id) @ 25°C:
100mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM5N16
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM5N16FUTE85LF. It is assigned with possible HTSUS value of 8541.21.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 5-tssop, sc-70-5, sot-353. It has a maximum Rds On and voltage of 3ohm @ 10ma, 4v. The product is rohs compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±10v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 200mw (ta). The product's input capacitance at maximum includes 9.3 pf @ 3 v. The product is available in surface mount configuration. The product π-mosvi, is a highly preferred choice for users. 5-ssop is the supplier device package value. The continuous current drain at 25°C is 100ma (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm5n16, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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