Rohm Semiconductor R8010ANX

R8010ANX Rohm Semiconductor
Rohm Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
560mOhm @ 5A, 10V
title:
R8010ANX
Vgs(th) (Max) @ Id:
5V @ 1mA
REACH Status:
REACH Unaffected
edacadModel:
R8010ANX Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5042483
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
40W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1750 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
62 nC @ 10 V
Supplier Device Package:
TO-220FM
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
R8010
ECCN:
EAR99
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This is manufactured by Rohm Semiconductor. The manufacturer part number is R8010ANX. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 560mohm @ 5a, 10v. The typical Vgs (th) (max) of the product is 5v @ 1ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 800 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 40w (tc). The product's input capacitance at maximum includes 1750 pf @ 25 v. The product is available in through hole configuration. The maximum gate charge and given voltages include 62 nc @ 10 v. to-220fm is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 10a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to r8010, a base product number of the product. The product is designated with the ear99 code number.

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Transistor, MOSFET Level 1 MSL(Environmental Information)
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TO-220FM Constitution Material List(Environmental Information)
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Transistor Whisker Info(Environmental Information)
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R8010ANX ESD Data(Environmental Information)
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TO220FM MOS Reliability Test(Reliability Documents)
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Transistor, MOSFET Flammability(Other Related Documents)
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TO220FM Inner Structure(Other Related Documents)
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TO-220FM Part Marking(Other Related Documents)

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