Rohm Semiconductor RSJ550N10TL

RSJ550N10TL Rohm Semiconductor
Rohm Semiconductor

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 100V 55A (Ta) 100W (Tc) Surface Mount LPTS
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
RSJ550
Gate Charge (Qg) (Max) @ Vgs:
143nC @ 10V
Rds On (Max) @ Id, Vgs:
16.8mOhm @ 27.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Manufacturer:
Rohm Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6150pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
LPTS
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
55A (Ta)
Customer Reference:
Power Dissipation (Max):
100W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RSJ550N10TL. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 100v 55a (ta) 100w (tc) surface mount lpts. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: rsj550. The maximum gate charge and given voltages include 143nc @ 10v. It has a maximum Rds On and voltage of 16.8mohm @ 27.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The rohm semiconductor's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 6150pf @ 25v. The product is available in surface mount configuration. lpts is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 55a (ta). The product carries maximum power dissipation 100w (tc). This product use mosfet (metal oxide) technology.

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RSJ550N10 ESD Data(Environmental Information)
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Transistor, MOSFET Level 1 MSL(Environmental Information)
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Transistor Whisker Info(Environmental Information)
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LPTS-Nip Constitution Material List(Environmental Information)
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LPTS TL Taping Spec(Datasheets)
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RSJ550N10(Datasheets)
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LPTS MOS Reliability Test(Other Related Documents)
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LPTSNi Inner Structure(Other Related Documents)
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LPTS Part Marking(Other Related Documents)
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