Toshiba Semiconductor and Storage TK25N60X5,S1F

TK25N60X5-S1F Toshiba Semiconductor and Storage TK25N60X5,S1F
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
140mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
60 nC @ 10 V
Vgs(th) (Max) @ Id:
4.5V @ 1.2mA
edacadModel:
TK25N60X5,S1F Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5456329
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
24 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2400 pF @ 300 V
Mounting Type:
Through Hole
Series:
DTMOSIV-H
Supplier Device Package:
TO-247
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
25A (Ta)
Power Dissipation (Max):
180W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK25N60
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK25N60X5,S1F. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 140mohm @ 7.5a, 10v. The maximum gate charge and given voltages include 60 nc @ 10 v. The typical Vgs (th) (max) of the product is 4.5v @ 1.2ma. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). It has a long 24 weeks standard lead time. The product's input capacitance at maximum includes 2400 pf @ 300 v. The product is available in through hole configuration. The product dtmosiv-h, is a highly preferred choice for users. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 25a (ta). The product carries maximum power dissipation 180w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk25n60, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET12062014 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET12062014.
Yes. We ship TK25N60X5,S1F Internationally to many countries around the world.