Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
18.1 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.4 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
1mm
Width:
1.7mm
Length:
3.1mm
Maximum Drain Source Resistance:
142 mΩ
Package Type:
TSOP
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
2.9 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
46 Weeks
Detailed Description:
P-Channel 60V 1.8A (Ta) 600mW (Ta) Surface Mount 6-TSOP
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6
Base Part Number:
NTGS5120
Gate Charge (Qg) (Max) @ Vgs:
18.1nC @ 10V
Rds On (Max) @ Id, Vgs:
111mOhm @ 2.9A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
942pF @ 30V
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSOP
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
1.8A (Ta)
Customer Reference:
Power Dissipation (Max):
600mW (Ta)
Technology:
MOSFET (Metal Oxide)
