Category:
Power MOSFET
Dimensions:
3.15 x 3.15 x 0.75mm
Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Width:
3.15mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.5V
Maximum Drain Source Resistance:
17.5 mΩ
Package Type:
WDFN
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
12 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
750 pF @ 12 V
Length:
3.15mm
Pin Count:
8
Typical Turn-Off Delay Time:
14 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
21 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.75mm
Typical Turn-On Delay Time:
12 ns
Minimum Operating Temperature:
-55 °C
Base Part Number:
NVTFS4
Detailed Description:
N-Channel 30V 13A (Ta) 3.1W (Ta), 21W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Input Capacitance (Ciss) (Max) @ Vds:
750pF @ 12V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
6nC @ 4.5V
Rds On (Max) @ Id, Vgs:
10.5mOhm @ 15A, 10V
Supplier Device Package:
8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-PowerWDFN
Power Dissipation (Max):
3.1W (Ta), 21W (Tc)
Current - Continuous Drain (Id) @ 25°C:
13A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
