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United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3J307T(TE85L,F). It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum gate charge and given voltages include 19 nc @ 4.5 v. It has a maximum Rds On and voltage of 31mohm @ 4a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 700mw (ta). The product's input capacitance at maximum includes 1170 pf @ 10 v. The product is available in surface mount configuration. The product u-mosv, is a highly preferred choice for users. tsm is the supplier device package value. The continuous current drain at 25°C is 5a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm3j307, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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