Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
26.3 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.46 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
1.5mm
Width:
4mm
Length:
5mm
Maximum Drain Source Resistance:
4.3 mΩ
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
17 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
40 Weeks
Detailed Description:
N-Channel 30V 10.6A (Ta) 820mW (Ta) Surface Mount 8-SOIC
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Base Part Number:
NTMS4920
Gate Charge (Qg) (Max) @ Vgs:
58.9nC @ 10V
Rds On (Max) @ Id, Vgs:
4.3mOhm @ 7.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4068pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
10.6A (Ta)
Customer Reference:
Power Dissipation (Max):
820mW (Ta)
Technology:
MOSFET (Metal Oxide)
