STMicroelectronics STD4N62K3

STD4N62K3 STMicroelectronics
STMicroelectronics

Product Information

Manufacturer Standard Lead Time:
22 Weeks
Detailed Description:
N-Channel 620V 3.8A (Tc) 70W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
4.5V @ 50µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
STD4N62
Gate Charge (Qg) (Max) @ Vgs:
14nC @ 10V
Rds On (Max) @ Id, Vgs:
1.95Ohm @ 1.9A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
620V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
450pF @ 50V
Mounting Type:
Surface Mount
Series:
SuperMESH3™
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
3.8A (Tc)
Customer Reference:
Power Dissipation (Max):
70W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STD4N62K3. It has typical 22 weeks of manufacturer standard lead time. It features n-channel 620v 3.8a (tc) 70w (tc) surface mount dpak. The typical Vgs (th) (max) of the product is 4.5v @ 50µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: std4n62. The maximum gate charge and given voltages include 14nc @ 10v. It has a maximum Rds On and voltage of 1.95ohm @ 1.9a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The stmicroelectronics's product offers user-desired applications. The product has a 620v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 450pf @ 50v. The product is available in surface mount configuration. The product supermesh3™, is a highly preferred choice for users. dpak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 3.8a (tc). The product carries maximum power dissipation 70w (tc). This product use mosfet (metal oxide) technology.

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ST(B,D)4N62K3(Datasheets)

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