Toshiba Semiconductor and Storage T2N7002AK,LM

T2N7002AK-LM Toshiba Semiconductor and Storage T2N7002AK,LM
T2N7002AK,LM
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
3.9Ohm @ 100mA, 10V
title:
T2N7002AK,LM
Vgs(th) (Max) @ Id:
2.1V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
T2N7002AK,LM Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/5298028
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
320mW (Ta)
standardLeadTime:
40 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
17 pF @ 10 V
Mounting Type:
Surface Mount
Series:
U-MOSVII-H
Gate Charge (Qg) (Max) @ Vgs:
0.35 nC @ 4.5 V
Supplier Device Package:
SOT-23-3
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
200mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
T2N7002
ECCN:
EAR99
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is T2N7002AK,LM. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 3.9ohm @ 100ma, 10v. The typical Vgs (th) (max) of the product is 2.1v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 320mw (ta). It has a long 40 weeks standard lead time. The product's input capacitance at maximum includes 17 pf @ 10 v. The product is available in surface mount configuration. The product u-mosvii-h, is a highly preferred choice for users. The maximum gate charge and given voltages include 0.35 nc @ 4.5 v. sot-23-3 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 200ma (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to t2n7002, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage T2N7002AK,LM. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage T2N7002AK,LM.
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