Maximum Drain Source Voltage:
90 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
6.25 W
Series:
2N6661
Maximum Gate Source Voltage:
20 V
Height:
6.6mm
Width:
9.398 Dia.mm
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
5 Ω
Package Type:
TO-39
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
350 mA
Minimum Gate Threshold Voltage:
0.8V
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
RoHS non-compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-205AD, TO-39-3 Metal Can
Rds On (Max) @ Id, Vgs:
4Ohm @ 1A, 10V
title:
2N6661
Vgs(th) (Max) @ Id:
2V @ 1mA
REACH Status:
REACH Unaffected
edacadModel:
2N6661 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
edacadModelUrl:
/en/models/4902349
Drain to Source Voltage (Vdss):
90 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
6.25W (Tc)
standardLeadTime:
6 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
50 pF @ 24 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-39
Packaging:
Bag
Current - Continuous Drain (Id) @ 25°C:
350mA (Tj)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
