Rohm Semiconductor US5U2TR

US5U2TR Rohm Semiconductor
US5U2TR
Rohm Semiconductor

Product Information

FET Feature:
Schottky Diode (Isolated)
Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 30V 1.4A (Ta) 1W (Ta) Surface Mount TUMT5
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
6-SMD (5 Leads), Flat Lead
Base Part Number:
US5U2
Gate Charge (Qg) (Max) @ Vgs:
2nC @ 5V
Rds On (Max) @ Id, Vgs:
240mOhm @ 1.4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Manufacturer:
Rohm Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
70pF @ 10V
Mounting Type:
Surface Mount
Supplier Device Package:
TUMT5
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
1.4A (Ta)
Customer Reference:
Power Dissipation (Max):
1W (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Rohm Semiconductor. The manufacturer part number is US5U2TR. The FET features of the product include schottky diode (isolated). It has typical 16 weeks of manufacturer standard lead time. It features n-channel 30v 1.4a (ta) 1w (ta) surface mount tumt5. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 6-smd (5 leads), flat lead. Base Part Number: us5u2. The maximum gate charge and given voltages include 2nc @ 5v. It has a maximum Rds On and voltage of 240mohm @ 1.4a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The rohm semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 70pf @ 10v. The product is available in surface mount configuration. tumt5 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 1.4a (ta). The product carries maximum power dissipation 1w (ta). This product use mosfet (metal oxide) technology.

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Transistor, MOSFET Level 1 MSL(Environmental Information)
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TUMT5 Constitution Material List(Environmental Information)
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Transistor Whisker Info(Environmental Information)
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US5U2 ESD Data(Environmental Information)
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TUMT5 TR Taping Spec(Datasheets)
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US5U2(Datasheets)
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TUMT5 Part Marking(Other Related Documents)
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TUMT5 Inner Structure(Other Related Documents)
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TUMT5 MOS DI Reliability Test(Other Related Documents)
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Transistor, MOSFET Flammability(Other Related Documents)

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FAQs

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