Nexperia USA Inc. BUK9Y15-60E,115

BUK9Y15-60E-115 Nexperia USA Inc. BUK9Y15-60E,115
Nexperia USA Inc.

Product Information

Manufacturer Standard Lead Time:
26 Weeks
Detailed Description:
N-Channel 60V 53A (Tc) 95W (Tc) Surface Mount LFPAK56, Power-SO8
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs:
17.2nC @ 5V
Rds On (Max) @ Id, Vgs:
13mOhm @ 15A, 10V
FET Type:
N-Channel
Manufacturer:
Nexperia USA Inc.
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
2603pF @ 25V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchMOS™
Supplier Device Package:
LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On):
5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
53A (Tc)
Customer Reference:
Power Dissipation (Max):
95W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Nexperia USA Inc.. The manufacturer part number is BUK9Y15-60E,115. It has typical 26 weeks of manufacturer standard lead time. It features n-channel 60v 53a (tc) 95w (tc) surface mount lfpak56, power-so8. The typical Vgs (th) (max) of the product is 2.1v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in sc-100, sot-669. The maximum gate charge and given voltages include 17.2nc @ 5v. It has a maximum Rds On and voltage of 13mohm @ 15a, 10v. It carries FET type n-channel. The nexperia usa inc.'s product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±10v. The product's input capacitance at maximum includes 2603pf @ 25v. The product is available in surface mount configuration. The product automotive, aec-q101, trenchmos™, is a highly preferred choice for users. lfpak56, power-so8 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 53a (tc). The product carries maximum power dissipation 95w (tc). This product use mosfet (metal oxide) technology.

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TrenchMOS Silicon Process 19/Sep/2014(PCN Assembly/Origin)
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Wafer Fab Location(PCN Assembly/Origin)
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BUK9Y15-60E,115(Datasheets)
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Mult Devices Label 30/Sep/2018(PCN Packaging)
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All Dev Label Chgs 2/Aug/2020(PCN Packaging)

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FAQs

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