Rohm Semiconductor SCT2H12NZGC11

SCT2H12NZGC11 Rohm Semiconductor
Rohm Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
175°C (TJ)
Package / Case:
TO-3PFM, SC-93-3
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 1.1A, 18V
Gate Charge (Qg) (Max) @ Vgs:
14 nC @ 18 V
Vgs(th) (Max) @ Id:
4V @ 900µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Drain to Source Voltage (Vdss):
1700 V
Vgs (Max):
+22V, -6V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
35W (Tc)
standardLeadTime:
27 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
184 pF @ 800 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3PFM
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
3.7A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCT2H12
ECCN:
EAR99
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This is manufactured by Rohm Semiconductor. The manufacturer part number is SCT2H12NZGC11. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 175°c (tj) operating temperature range. Moreover, the product comes in to-3pfm, sc-93-3. It has a maximum Rds On and voltage of 1.5ohm @ 1.1a, 18v. The maximum gate charge and given voltages include 14 nc @ 18 v. The typical Vgs (th) (max) of the product is 4v @ 900µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 18v. The product has a 1700 v drain to source voltage. The maximum Vgs rate is +22v, -6v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 35w (tc). It has a long 27 weeks standard lead time. The product's input capacitance at maximum includes 184 pf @ 800 v. The product is available in through hole configuration. to-3pfm is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 3.7a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to sct2h12, a base product number of the product. The product is designated with the ear99 code number.

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MOS-2GTHD Reliability Test(Reliability Documents)
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SCT2H12NZ ESD Data(Environmental Information)
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TO-3PFM MOS Constitution Material List(Environmental Information)
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SiC Whisker Info(Environmental Information)
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SiC Level 1 MSL(Environmental Information)
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TO-3PFM Taping Spec(Datasheets)
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TO-3PFM Inner Structure(Design Resources)
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SiC Flammability(Other Related Documents)
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TO-3PFM SiC Part Marking(Other Related Documents)

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